PUBLICATIONS (since 2018)

K. Chockalingam, W. Dörfler, A. Voigt, M. Salvalaglio

The elastic inclusion problem in the (amplitude) phase-field crystal model

V. Skogvoll, L. Angheluta, A. Skaugen, M. Salvalaglio, J. Viñals

A phase field crystal theory of the kinematics and dynamics of dislocation lines

M. Albani, R. Bergamaschini, A. Barzaghi et al.

Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime

Z. Chehadi, M. Bouabdellaoui, M. Bochet-Modaresialam et al.

Scalable disordered hyperuniform architectures via nano-imprint lithography of metal oxides

M. Salvalaglio, D. J. Srolovitz, J. Han

Disconnection-mediated Migration of Interfaces in Microstructues: II. diffuse interface simulations

arXiv:2103.09689. Submitted.

J. Han, D. J. Srolovitz, M. Salvalaglio

Disconnection-mediated Migration of Interfaces in Microstructues: I. continuum model

J. B. Claude, M. Bouabdellaoui, J. Wenger, M. Bollani, M. Salvalaglio, M. Abbarchi

Germanium-based, disordered hyperuniform nanoarchitectures by ion beam impact


M. Salvalaglio, A. Voigt, Z.-F. Huang, K. R. Elder

Mesoscale Defect Motion in Binary Systems: Effects of Compositional Strain and Cottrell Atmospheres

M. Salvalaglio, M. Selch, A. Voigt, S. Wise

Doubly Degenerate Diffuse Interface Models of Anisotropic Surface Diffusion

M. Salvalaglio,A. Voigt, S. Wise

Doubly Degenerate Diffuse Interface Models of Surface Diffusion

M. Salvalaglio, M. Bouabdellaoui, M. Bollani, et al.

Hyperuniform monocrystalline structures by spinodal solid-state dewetting

Phys. Rev. Lett. 125 , 126101 (2020)   -  arXiv:1912.02952

A. Barzaghi, S. Firoozabadi, M. Salvalaglio et al.

Self-assembly of nanovoids in Si micro-crystals epitaxially grown on deeply patterned substrates

C.L. Manganelli, M. Virgilio, O. Skibitzki et al.

Temperature dependence of strain-shift coefficient in epitaxial Ge/Si(001): a comprehensive analysis

M. Salvalaglio, L. Angheluta, Z.-F. Huang et al.

A coarse-grained phase-field crystal model of plastic motion

A,Benali, J. B. Claude, S. Checcucci et al.

Flexible photonic based on dielectric antennas

M. Bollani, M. Salvalaglio, M. Naffouti et al.,

Templated dewetting of single-crystal, ultra-long nano-wires and on-chip silicon circuits

Nature Communication 10 , 5632 (2019) 

M. Naffouti, M. Salvalaglio, T. David et al.

Deterministic three-dimensional self-assembly of Si through a rimless and topology-preserving dewetting regime

Physical Review Materials 3 , 103402 (2019)

S. Praetorius, M. Salvalaglio, A. Voigt

An efficient numerical framework for the amplitude expansion of the phase-field crystal model

Model. Simul. Mater. Sci. Eng. 27 , 044004 (2019) 

M. Salvalaglio, A. Voigt, K. Elder

Closing the gap between atomic-scale lattice deformations and continuum elasticity

npj Computational Materials 5 , 48 (2019)

M. Albani, R. Bergamaschini, M. Salvalaglio et al,

Competition between kinetics and thermodynamics during the growth of faceted crystal by phase field modeling

Phys. Status Solidi b, 1800518 (2019) 

R. Backofen, S. M. Wise, M. Salvalaglio, A. Voigt

Convexity splitting in a phase field model for surface diffusion

Int. J. Num. Anal. Mod. 16 , 192 (2019)  -  arXiv:1710.09675

M. Albani, L. Ghisalberti, R. Bergamaschini, et al

Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiments

Phys. Rev. Materials 2, 093404 (2018)

F. Montalenti, F. Rovaris, R. Bergamaschini, et al

Dislocation-free SiGe/Si heterostructures

Crystals 8, 257 (2018)

M. Salvalaglio, R. Backofen, K. R. Elder, A. Voigt

Defects at grain boundaries: A coarse-grained, three-dimensional description by the APFC model

Phys. Rev. Materials 2, 053804 (2018)  -  arXiv:1803.03233

M. Abbarchi, M. Naffouti, M. Lodari, et al

Solid-state dewetting of single-crystal Si on insulator: effect of annealing temperature and patch size

Microelectronic Engineering 190, 1 (2018)

M. Salvalaglio, P. Zaumseil, Y. Yamamoto, et al

Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instability

Appl. Phys. Lett. 112, 022101 (2018).